FZ1200R12KL4C

roduct Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

IGBT Modules

RoHS:

N

Product:

IGBT Silicon Modules

Configuration:

Dual Common Emitter Common Gate

Collector- Emitter Voltage VCEO Max:

1200 V

Collector-Emitter Saturation Voltage:

2.1 V

Continuous Collector Current at 25 C:

1900 A

Gate-Emitter Leakage Current:

400 nA

Pd - Power Dissipation:

7.8 kW

Package / Case:

IHM130

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

+ 125 C

Packaging:

Tray

Brand:

Infineon Technologies

Height:

38 mm

Length:

140 mm

Maximum Gate Emitter Voltage:

20 V

Mounting Style:

SMD/SMT

Product Type:

IGBT Modules

Factory Pack Quantity:

2

Subcategory:

IGBTs

Technology:

Si

Width:

130 mm